Semiconductor Metrology
From the leader in scientific instrumentation,
FT-IR, Raman and X-ray spectroscopy tools for the molecular and elemental characterization of wafer and packaging materials for research, process development and process control in the semiconductor and microelectronics industry.
Training courses for Nicolet ECO FT-IR Metrology tools
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FT-IR metrology tools for measuring dopant concentration levels in dielectric films (BPSG, PSG, FSG, etc.), hydrogen levels in silicon nitride films, epitaxial film thickness, MEMS device thickness, and substitutional carbon and interstitial oxygen levels in silicon wafers.
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ICP-MS is the accepted and most powerful technique for the analysis and quantification of trace elements in both solid and liquid samples. Its applications range from routine environmental analyses and geological applications, through to clinical research, material sciences and the semiconductor industry.
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Microbeam X-ray Fluorescence is a revolutionary new approach to film thickness determination. Using a focused x-ray beam energy source, Microbeam XRF measures the thickness and composition of up to six layers of deposited metals simultaneously, from angstrom to micron thickness ranges.
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Raman spectroscopy for semiconductor materials characterization.
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X-ray photospectroscopy and Auger electron spectroscopy for ultra thin film characterization.
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