| The use of Fourier transform infrared spectrometry for the determination of [Oi] and [Cs ] levels in silicon is rapid, precise, non-destructive, non-contact and relatively inexpensive. With ECO application-specific software tailored for customer operation, these determinations can be performed with little knowledge of the theory of the instrument involved.
Wafers of varying resistivities, backside damages and thickness can be easily analyzed. This affords the device engineers and operators in the fabrication lines a powerful technique to aid them in the production of semiconductor devices without the need for the spectroscopy “expert” to perform the analysis. |
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